Data Storage Gets Ultrasmall with Remarkable Breakthrough in Electrical Resistance

Data Storage Gets Ultrasmall with Remarkable Breakthrough in Electrical Resistance

Data Storage Gets Ultrasmall with Remarkable Breakthrough in Electrical Resistance

Two former Clark School Ph.D. students who graduated in 1993 in Materials Engineering, Harsh Deep Chopra and Susan (Zonglu) Hua, who are now at State University of New York (Buffalo) have developed an extremely sensitive nanoscale device that could shrink ultra-high-density storage devices to record sizes. The magnetic sensor, made of nickel and only a few atoms in diameter, could increase data storage capacity by a factor of a thousand or more and could ultimately lead to supercomputing devices as small as a wristwatch. The National Science Foundation (NSF) supported the research.

Read the NSF press release.

February 3, 2004


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