Data Storage Gets Ultrasmall with Remarkable Breakthrough in Electrical Resistance

Data Storage Gets Ultrasmall with Remarkable Breakthrough in Electrical Resistance

Data Storage Gets Ultrasmall with Remarkable Breakthrough in Electrical Resistance

Two former Clark School Ph.D. students who graduated in 1993 in Materials Engineering, Harsh Deep Chopra and Susan (Zonglu) Hua, who are now at State University of New York (Buffalo) have developed an extremely sensitive nanoscale device that could shrink ultra-high-density storage devices to record sizes. The magnetic sensor, made of nickel and only a few atoms in diameter, could increase data storage capacity by a factor of a thousand or more and could ultimately lead to supercomputing devices as small as a wristwatch. The National Science Foundation (NSF) supported the research.

Read the NSF press release.

February 3, 2004


Prev   Next

Current Headlines

Aerospace Engineering Students Win at AIAA YPSE Conference

Brain and Behavior Initiative Hosts 3rd Annual Seed Grant Symposium

Papamanthou Named Director of MC2

Behtash Babadi Wins Clark School's Junior Faculty Teaching Award

NASA Tests Search and Rescue Tech, With UMD Assist

Accepting Applications for Student Entrepreneurship Fellowship

Discoveries from NASA's Parker Solar Probe published in Nature

Rama Chellappa Wins 2020 IEEE Jack S. Kilby Signal Processing Medal

News Resources

Return to Newsroom

Search News

Archived News

Events Resources

Events Calendar